advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 700v fast switching characteristics r ds(on) 1.45 simple drive requirement i d 7a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 3.8 /w rthj-a maximum thermal resistance, junction-ambient 6 5 /w data & specifications subject to change without not ice ap2762i-h-hf -55 to 150 6 24 33 halogen-free product parameter 1 201501163 parameter rating 700 + 30 -55 to 150 18 7 storage temperature range g d s g d s to-220cfm(i) ap2762 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220cfm package is widely preferred for all commercia l- industrial through hole applications. the mold compound pr ovides a high isolation voltage capability and low thermal resista nce between the tab and the external heat-sink. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 700 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =2.4a - - 1.45 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =4a - 6.3 - s i dss drain-source leakage current v ds =480v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge i d =6a - 30 48 nc q gs gate-source charge v ds =200v - 7 - nc q gd gate-drain ("miller") charge v gs =10v - 11 - nc t d(on) turn-on delay time v dd =200v - 35 - ns t r rise time i d =3a - 32 - ns t d(off) turn-off delay time r g =50 - 188 - ns t f fall time v gs =10v - 35 - ns c iss input capacitance v gs =0v - 1400 2240 pf c oss output capacitance v ds =30v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 7 - pf r g gate resistance f=1.0mhz - 2.5 5 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =6a, v gs =0v - - 1.5 v t rr reverse recovery time i s =6a, v gs =0 v , - 440 - ns q rr reverse recovery charge di/dt=100a/s - 2.5 - uc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1mh , r g =25 3.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. ap2762i-h-hf 2 .
ap2762i-h-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-r esistance temperature v.s. junction temper ature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =3a v g =10v 0 2 4 6 8 10 0 4 8 12 16 20 24 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g = 5.0 v 0 1 2 3 4 5 6 0 6 12 18 24 30 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 7.0v 6.0v v g = 5 .0 v 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j = 150 o c t j = 25 o c 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) i d =250ua .
ap2762i-h-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2 4 6 8 10 12 0 10 20 30 40 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =200v 1 10 100 1000 10000 1 5 9 13 17 21 25 29 33 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge operation in this area limited by r ds(on) .
marking information 5 ap2762i-h-hf part number package code date code (ywwsss) y last digit of the year ww week sss sequence 2762i ywwsss h option .
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